Methods for forming wordlines, transistor gates, and conductive interconnects, and wordline, transistor gate, and conductive interconnect structures

ABSTRACT

The invention encompasses stacked semiconductor devices including gate stacks, wordlines, PROMs, conductive interconnecting lines, and methods for forming such structures. In one aspect, the invention includes a method of forming a conductive line comprising: a) forming a polysilicon layer; forming a silicide layer against the polysilicon layer; b) providing a conductivity-enhancing impurity within the silicide layer; and c) providing the polysilicon layer and the silicide layer into a conductive line shape. In another aspect, the invention includes a programmable-read-only-memory device comprising: a) a first dielectric layer over a substrate; b) a floating gate over the first dielectric layer; c) a second dielectric layer over the floating gate; d) a conductive line over the second dielectric layer; and e) a metal-silicide layer over the conductive line, the metal-silicide layer comprising a Group III dopant or a Group V dopant.

RELATED PATENT DATA

This patent resulted from a divisional application of U.S. patent application Ser. No. 09/332,271, filed Jun. 11, 1999.

TECHNICAL FIELD

The invention pertains to a number of semiconductor structures and methods for forming such structures, including gate stack structures, conductive line structures, conductive interconnect structures, and programmable-read-only-memory devices.

BACKGROUND OF THE INVENTION

A continuous challenge in semiconductor processing is to improve conductivity and performance of stacked semiconductor structures. Among the stacked semiconductor structures commonly utilized are gate stacks, wordlines, programmable-read-only-memory devices such as EPROMs and EEPROMs, and conductive interconnects. Formation of some of these prior art stacked structures is described with reference to FIGS. 1-4. FIGS. 1-2 pertain to the formation of a wordline or gate stack structure, and FIGS. 3-4 pertain to the formation of a programmable-read-only memory device.

Referring to FIG. 1, a semiconductor wafer fragment 10 is illustrated at a preliminary processing step of a prior art process for forming a wordline or gate stack. Wafer fragment 10 comprises a semiconductive material substrate 12, and field oxide regions 14 over substrate 12. A gate dielectric layer 16, generally comprising silicon dioxide, extends between field oxide regions 14. A polysilicon layer 18 and a polycide (silicide) layer 20 are formed over field oxide regions 14 and gate dielectric layer 16.

Polysilicon layer 18 typically comprises polysilicon uniformly doped with a conductivity enhancing dopant (illustrated by stippling within layer 18). Polycide layer 20 comprises a metal silicide, such as tungsten silicide, molybdenum silicide, titanium silicide or cobalt silicide. The formation of polycide layer 20 typically comprises depositing a metal over polysilicon layer 18 and reacting the metal with polysilicon layer 18 to form a metal-silicide. The reacting can comprise thermal processing of the metal layer and polysilicon layer at, for example, temperatures of from about 600° C. to about 800° C.

Referring to FIG. 2, layers 16, 18 and 20 are patterned to form a conductive stack, and specifically to form a wordline 24. Source/drain regions 25 are provided proximate wordline 24. Conductive wordline 24 comprises a transistor gate electrically connecting source/drain regions 25. The final transistor structure can be either a p-channel transistor (PMOS), or an n-channel transistor (NMOS), and can be incorporated within a CMOS construction.

The speed of devices comprising wordlines and conductive gates generally increases with increasing conductivities of the wordlines and conductive gates. Accordingly, it would be desirable to improve the conductivity of wordlines and transistor gates. A method for improving the conductivity of a doped layer is to “activate” the dopant within the layer. Although the chemistry of dopant activation is not well understood, activation is thought to occur as dopant is dispersed from grain boundaries in a polysilicon layer to bulk polysilicon away from the grain boundaries. Dopants are typically activated by thermal processing.

Alternative procedures similar to those of FIGS. 1 and 2 can be used to form a conductive polysilicon interconnect. Such interconnects can comprise a line of polycide over a polysilicon. Accordingly, such interconnects are similar to wordline 24, but lack dielectric layer 16.

The speed of devices comprising conductive interconnects can increase with increasing conductivities of the conductive interconnects. Accordingly, it would be desirable to improve the conductivity of conductive interconnects.

Referring to FIGS. 3-4, a prior art process for forming a programmable-read-only memory (PROM) device is illustrated. In the embodiment of FIGS. 3-4, similar numbering to that of the embodiment of FIGS. 1-2 is utilized, with differences indicated by the suffix “a”, or by different numbers.

Referring to FIG. 3, a wafer fragment 10 a is illustrated at a preliminary step during formation of a programmable-read-only memory device. Wafer fragment 10 a comprises a semiconductive material 12 a over which is formed field oxide regions 14 a and gate dielectric layer 16 a. A first polysilicon layer 18 a is formed over regions 14 a and dielectric layer 16 a. A second dielectric layer 26 and a second polysilicon layer 28 are formed over first polysilicon layer 18 a, and a polycide layer 30 is formed over second dielectric layer 26.

Polysilicon layers 18 a and 28 comprise uniformly doped polysilicon, typically comprising a dopant concentration of greater than 1×10¹⁹ ions/cm³.

Referring to FIG. 4, layers 16 a, 18 a, 20 a, 26, 28 and 30 are patterned to form the resulting PROM device 32. Within device 32, the patterned first polysilicon layer 18 a is typically referred to as a floating gate. The patterned second polysilicon layer 28 and polycide layer 30 together comprise a conductive line 33.

The speed of circuits comprising PROM devices can increase with increasing conductivities of the conductive line and floating gate. Accordingly, it would be desirable to improve the conductivities of conductive lines and floating gates.

SUMMARY OF THE INVENTION

The invention encompasses stacked semiconductor devices including gate stacks, wordlines, PROMs, conductive interconnecting lines, and methods for forming such structures.

In one aspect, the invention includes a method of forming a conductive line. A silicide layer is formed against a polysilicon layer. A conductivity-enhancing impurity is provided within the silicide layer. The polysilicon layer and the silicide layer are formed into a conductive line shape.

In another aspect, the invention includes a programmable-read-only-memory device comprising a first dielectric layer over a substrate, a floating gate over the first dielectric layer, a second dielectric layer over the floating gate, a conductive line over the second dielectric layer, and a metal-silicide layer over the conductive line. The metal-silicide layer comprises a Group III dopant or a Group V dopant.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention are described below with reference to the following accompanying drawings.

FIG. 1 illustrates a semiconductor wafer fragment at preliminary step of a prior art method for forming a wordline.

FIG. 2 illustrates the FIG. 1 wafer fragment at a prior art step subsequent to that of FIG. 1.

FIG. 3 illustrates a semiconductor wafer fragment at preliminary step of a prior art method for forming PROM device.

FIG. 4 illustrates the FIG. 3 wafer fragment at a prior art step subsequent to that of FIG. 3.

FIG. 5 illustrates a semiconductor wafer fragment at preliminary step of a first embodiment method of the present invention for forming a wordline.

FIG. 6 illustrates the FIG. 5 wafer fragment at a step subsequent to that of FIG. 5.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

This disclosure of the invention is submitted in furtherance of the constitutional purposes of the U.S. Patent Laws “to promote the progress of science and useful arts” (Article 1, Section 8).

A first embodiment of the present invention is described with reference to FIGS. 5 and 6. In describing the first embodiment, like numerals from the preceding discussion of the prior art are utilized where appropriate, with differences being indicated by the suffix “b” or with different numerals.

Referring to FIG. 5, a semiconductor wafer fragment 10 b is illustrated at a preliminary processing step. Wafer fragment 10 b comprises a semiconductive material substrate 12 b, such as, for example, monocrystalline silicon. Field isolation regions 14 b and a gate dielectric layer 16 b are formed over semiconductive material 12 b. Field isolation regions 14 b and gate dielectric layer 16 b comprise an insulative material, such as, for example, silicon dioxide.

A conductive layer 18 b and a polycide layer 20 b are formed over field isolation regions 14 b and gate dielectric layer 16 b. Conductive layer 18 b preferably comprises polysilicon doped to a concentration of greater than 1×10¹⁹ atoms/cm³ with a conductivity enhancing dopant. Polycide layer 20 b is against conductive layer 18 b and comprises a metal silicide doped with conductivity enhancing dopant (the dopant being indicated by stippling). Preferably, polycide layer 20 b is doped to a concentration of greater than 1×10¹⁸ atom/cm³ with the conductivity enhancing dopant.

Polycide layer 20 b can comprise, for example, a metal selected from the group consisting of tungsten, tantalum, titanium, molybdenum and cobalt. Polycide layer 20 b can be formed by the prior art method of depositing a metal over polysilicon layer 18 b and reacting the metal with polysilicon layer 18 b at temperatures of from about 600° C. to about 800° C. to form silicide layer 20 b. Alternatively, and preferably, the thermal processing to form polycide layer 20 b encompasses rapid thermal processing (RTP). In the context of this document, RTP refers to a process wherein a temperature is ramped at greater than about 7° C./second. Preferably, the RTP temperature is ramped to exceed 850° C. and is maintained above 850° C. for at least 10 seconds. Such RTP can activate dopant within polycide layer 20 b to increase the conductivity of doped polycide layer 20 b.

The RTP preferably occurs while exposing silicide layer 20 b to an oxygen-comprising atmosphere, such as, for example, an atmosphere comprising at least one compound selected from the group consisting of O₂, O₃, N₂O and NO. Under such preferred conditions, a silicon dioxide layer 35 can be formed over polycide layer 20 b. Silicon dioxide layer 35 can impede or prevent dopant diffusion outwardly from layer 20 b and thereby advantageously retain dopant within layer 20 b. It is noted that while the RTP preferably occurs while exposing layer 20 b to an oxidizing atmosphere, the RTP will generally also activate dopant within layer 20 b if conducted while exposing layer 20 b to a non-oxidizing atmosphere.

Wafer 10 b differs from wafer 10 of the prior art (shown in FIGS. 1 and 2) in that polycide layer 20 b is doped with a conductivity-enhancing impurity, whereas the prior art polycide 20 (shown in FIGS. 1 and 2) is not doped. As indicated above, the conductivity-enhancing dopant is preferably provided to a concentration of greater than 1×10¹⁸ atom/cm³. Suitable conductivity enhancing dopants can comprise, for example, Group III or Group V dopants, such as dopants comprising boron, phosphorous or arsenic. Methods for doping silicide layer 20 b include, for example, implanting dopant into the layer after formation/deposition of the layer, in situ doping of the layer during either chemical vapor deposition (CVD) or sputter deposition, and out-diffusion from a doped polysilicon layer 18 b beneath silicide layer 20 b.

An example CVD process for forming a polycide layer 20 b comprising tungsten silicide doped with phosphorus (WSi_(x)P_(y)) comprises utilization of WF₆, SiH₄ and PH₃ as precursor materials in a CVD reactor. Alternatively, dichlorosilane can be substituted for SiH₄. Also, alternative dopant hydrides can be substituted for PH₃ to form a polycide doped with an alternative dopant. Such alternative metal hydrides can include, for example, AsH₃ or diborane. Also, other organic precursors comprising Group III or Group V dopants can utilized as alternative sources of dopant.

An example sputter deposition process comprises utilization of a target comprising a mixture of a source of metal, a source of silicon and a source of conductivity-enhancing impurity. The target is sputtered to form a silicide layer 20 b comprising the conductivity-enhancing impurity and the metal.

Referring to FIG. 6, layers 16 b, 18 b, 20 b, and 35 are patterned to form a conductive line 24 b. Source/drain regions 25 b are formed within substrate 12 b such that conductive line 24 b comprises a stacked transistor gate structure which electrically connects source/drain regions 25 b. The resulting transistor structure can be a PMOS transistor or NMOS transistor, and can be incorporated into a CMOS structure.

Conductive line 24 b differs from conductive line 24 (shown in FIG. 2) in that line 24 b comprises a silicide layer 20 b doped with conductivity-enhancing impurity. Such doping of layer 20 b can lower the resistance of layer 20 b relative to that of layer 20 (shown in FIG. 1) and thereby improve the performance of conductive line 24 b relative to that of conductive line 24 (shown in FIG. 2). The above-discussed RTP can further improve the conductivity of layer 20 b by activating dopant within layer 20 b.

Although layer 20 b is doped prior to patterning of layer 20 b to form wordline 24 b in the shown method, in alternative embodiments layer 20 b can be doped after such patterning. As an example method of accomplishing such alternative embodiments, layer 20 b could be doped by ion implanting a conductivity enhancing dopant into layer 20 b after patterning of layer 20 b to form wordline 24 b. As another example method, layer 20 b can be doped by out-diffusion from conductively doped layer 18 b by thermal treatment of wordline 24 b.

The doped silicide of the present invention can be incorporated into numerous circuit device structures, including, for example, programmable-read-only-devices such as EPROMS and EEPROMS.

To aid in interpretation of the claims that follow, the term “semiconductive substrate” is defined to mean any construction comprising semiconductive material, including, but not limited to, bulk semiconductive materials such as a semiconductive wafer (either alone or in assemblies comprising other materials thereon), and semiconductive material layers (either alone or in assemblies comprising other materials). The term “substrate” refers to any supporting structure, including, but not limited to, the semiconductive substrates described above.

In compliance with the statute, the invention has been described in language more or less specific as to structural and methodical features. It is to be understood, however, that the invention is not limited to the specific features shown and described, since the means herein disclosed comprise preferred forms of putting the invention into effect. The invention is, therefore, claimed in any of its forms or modifications within the proper scope of the appended claims appropriately interpreted in accordance with the doctrine of equivalents. 

What is claimed is:
 1. A semiconductor construction, comprising: a semiconductive material substrate, the substrate having an upper surface; a first layer over the upper surface of the substrate, the first layer comprising polysilicon doped to a concentration of greater than 1×10¹⁹ atoms/cm³ with conductive-enhancing dopant, the first layer being patterned as a portion of a conductive line; a second layer over and physically against the first layer, the second layer comprising silicide doped to a concentration of greater than 1×10¹⁸ atoms/cm³ with conductive-enhancing dopant, the second layer being patterned as a portion of the conductive line, the conductive line comprising the first and second layers having a pair of opposing lateral edges; a pair of conductively-doped diffusion regions extending into the substrate beside the lateral edges of the conductive line, the conductively doped diffusion regions having upper surfaces corresponding to the upper surface of the substrate; and a silicon dioxide layer over and physically against the second layer and no silicon dioxide layer being over and physically against the upper surfaces of the conductively-doped diffusion regions, the silicon dioxide layer being formed by oxidizing an upper surface of the second layer during rapid thermal processing of the second layer.
 2. The construction of claim 1 wherein the silicon dioxide layer being formed by the rapid thermal processing comprises ramping a temperature at greater than about 7° C./second.
 3. The construction of claim 1 wherein the silicon dioxide layer being formed by the rapid thermal processing comprises ramping a temperature to exceed 850° C. and maintaining the temperature above 850° C. for at least 10 seconds.
 4. The construction of claim 1 wherein the second layer being doped comprises out-diffusion of conductive-enhancing dopant from the first layer into the second layer.
 5. The construction of claim 1 wherein the silicon dioxide layer being formed by oxidizing the second layer comprises exposing the second layer to an atmosphere having at least one compound selected from the group consisting of O₂, O₃, N₂O and NO.
 6. The construction of claim 1 wherein the silicide of the second layer comprises tantalum.
 7. The construction of claim 1 wherein the conductive-enhancing dopant for the second layer comprises a group III or a group V element other than boron, phosphorous and arsenic.
 8. The construction of claim 1 wherein the silicide of the second layer comprises cobalt.
 9. The construction of claim 1 wherein the silicon dioxide layer comprises a dopant barrier layer.
 10. The construction of claim 1 wherein the silicon dioxide layer comprises a thickness less than half a thickness of the second layer.
 11. A semiconductor construction, comprising: a semiconductive material substrate, the substrate having an upper surface and having oxide isolation regions supported thereby; a first layer over the upper surface of the substrate, the first layer comprising polysilicon doped to a concentration of greater than 1×10¹⁹ atoms/cm³ with conductive-enhancing dopant; a second layer over and physically against the first layer, the second layer comprising suicide doped to a concentration of greater than 1×10¹⁸ atoms/cm³ with conductive-enhancing dopant, the conductive-enhancing dopant for the second layer comprises a group III or a group V element other than boron, phosphorous and arsenic; a silicon dioxide layer over and physically against the second layer; and wherein the silicon dioxide layer, second layer and first layer together are an expanse extending over the substrate and over the oxide isolation regions.
 12. The construction of claim 11 wherein the silicon dioxide layer is formed by oxidizing an upper surface of the second layer during rapid thermal processing of the second layer.
 13. The construction of claim 12 wherein the silicon dioxide layer being formed by the rapid thermal processing comprises ramping a temperature at greater than about 7° C./second to exceed 850° C. and maintaining the temperature above 850° C. for at least 10 seconds.
 14. The construction of claim 11 wherein the silicon dioxide layer comprises a thickness less than half a thickness of the second layer.
 15. The construction of claim 11 wherein the second layer being doped comprises out-diffusion of conductive-enhancing dopant from the first layer into the second layer.
 16. The construction of claim 11 wherein the silicon dioxide layer comprises a dopant barrier layer.
 17. A semiconductor construction, comprising: a semiconductive material substrate, the substrate having an upper surface; a first layer over the upper surface of the substrate, the first layer comprising polysilicon doped to a concentration of greater then 1×10¹⁹ atoms/cm³ with conductive-enhancing dopant; a second layer over and physically against the first layer, the second layer comprising suicide doped to a concentration of greater than 1×10¹⁸ atoms/cm³ with conductive-enhancing dopant; and an oxide layer over and physically against the second layer, the oxide layer comprising a thickness less than half a thickness of the second layer.
 18. The construction of claim 17 wherein the oxide layer comprises silicon dioxide.
 19. The construction of claim 17 wherein the oxide layer is formed by oxidizing an upper surface of the second layer during rapid thermal processing of the second layer.
 20. The construction of claim 19 wherein the oxide layer being formed by the rapid thermal processing comprises ramping a temperature at greater than about 7° C./second to exceed 850° C. and maintaining the temperature above 850° C. for at least 10 seconds.
 21. The construction of claim 17 wherein the second layer being doped comprises out-diffusion of conductive-enhancing dopant from the first layer into the second layer.
 22. The construction of claim 17 wherein the conductive-enhancing dopant for the second layer comprises a group III or a group V element other than boron, phosphorous and arsenic. 